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| CBCP68 NPN CBCP69 PNP SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS Central Semiconductor DESCRIPTION: TM Corp. The CENTRAL SEMICONDUCTOR CBCP68, CBCP69 types are complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. SOT-223 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCES VCEO VEBO IC ICM IB IBM PD TJ,Tstg QJA UNITS V V V A A mA mA W oC oC/W Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current-Peak Base Current Base Current-Peak Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 25 20 5.0 1.0 2.0 100 200 2.0 -65 to +150 62.5 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(ON) VBE(ON) hFE TEST CONDITIONS VCB=25V VCB=25V, TA=150oC VEB=5.0V IC=10mA IC=10mA IE=1.0mA IC=1.0A, IB=100mA VCE=10V, IC=5.0mA VCE=1.0V, IC=1.0A VCE=10V, IC=5.0mA MIN TYP MAX 10 1.0 10 UNITS mA mA mA V V V V V V 25 20 5.0 0.5 0.6 1.0 50 66 SYMBOL hFE hFE fT Cob TEST CONDITIONS VCE=1.0V, IC=500mA VCE=1.0V, IC=1.0A VCE=5.0V, IC=10mA, f=20MHz VCB=5.0V, IE=0, F=450kHz MIN 85 60 65 TYP MAX 375 UNITS 25 MHz pF All dimensions in inches (mm). LEAD CODE: 1) 2) 3) 4) BASE COLLECTOR EMITTER COLLECTOR R2 67 |
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